MOSFET tranzisztor, 1 elem/chip, 101 A, 60 V, 8-tüskés, SuperSO8 5 x 6

The Infineon OptiMOS™ 5 N-channel power MOSFET has 60 V drain source voltage (VDS) & 101 A drain current (ID). It's logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Optimized for high performance SMPS ,e.g. sync. REC
100%-osan lavinaálló
Kimagasló termikus ellenállás
, 4 (N-csatorna)
Qualified according to JEDEC1) for target applications
Ólommentes vezetékbevonat
RoHScompliant
Halogen-free according to IEC61249-2-21